Infineon FF1600R12IP7BOSA1 Half Bridge IGBT, 1.6 kA 1200 V, Screw Mount

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TWD32,326.00

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TWD33,942.30

(含稅)

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RS庫存編號:
349-361
製造零件編號:
FF1600R12IP7BOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

1.6 kA

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

20 mW

Configuration

Half Bridge

Mounting Type

Screw Mount

Channel Type

N

COO (Country of Origin):
DE
The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.

Increase in power density
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing

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