Infineon FF1600R12IP7BOSA1, Type N-Channel Half Bridge IGBT, 1600 A 1200 V PrimePACKTM2, Screw

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RS庫存編號:
349-361
製造零件編號:
FF1600R12IP7BOSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

1600A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

20mW

Number of Transistors

2

Configuration

Half Bridge

Package Type

PrimePACKTM2

Mount Type

Screw

Channel Type

Type N

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.85V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60749, IEC 60068, IEC 60747

Height

36.5mm

Width

37.7 mm

Length

89mm

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.

Increase in power density

Less cooling effort for same output power

Higher inverter output current

Avoidance of paralleling of IGBT modules

Standardized housing

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