Semikron Danfoss SKM100GB125DN, Type N-Channel Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS, Panel

查看所有IGBTs
可享批量折扣

小計（1 件）*

TWD6,183.00

(不含稅)

TWD6,492.15

(含稅)

Add to Basket
選擇或輸入數量
最後的 RS 庫存
  • 最終 125 個，準備發貨

單位
每單位
1 - 4TWD6,183.00
5 +TWD6,059.00

* 參考價格

RS庫存編號:
468-2410
製造零件編號:
SKM100GB125DN
製造商:
Semikron Danfoss
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Semikron Danfoss

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

100A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Configuration

Dual Half Bridge

Package Type

SEMITRANS

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

150°C

Maximum Collector Emitter Saturation Voltage VceSAT

3.85V

Maximum Operating Temperature

-40°C

Height

30.5mm

Length

94.5mm

Standards/Approvals

No

Automotive Standard

No

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結