Semikron Danfoss SKM75GB12T4 Dual Half Bridge IGBT Module, 115 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

查看所有IGBTs
可享批量折扣

小計（1 件）*

TWD2,800.00

(不含稅)

TWD2,940.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 1 件準備從其他地點送貨
  • 加上 24 件從 2026年3月11日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 4TWD2,800.00
5 - 9TWD2,781.00
10 - 49TWD2,704.00
50 - 99TWD2,649.00
100 +TWD2,623.00

* 參考價格

RS庫存編號:
687-4961
製造零件編號:
SKM75GB12T4
製造商:
Semikron Danfoss
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Semikron Danfoss

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS2

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結