Semikron Danfoss SKM200GB126D Dual Half Bridge IGBT Module, 260 A 1200 V, 7-Pin SEMITRANS3, Panel Mount

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TWD7,958.00

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TWD8,355.90

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RS庫存編號:
468-2460
製造零件編號:
SKM200GB126D
製造商:
Semikron Danfoss
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品牌

Semikron Danfoss

Maximum Continuous Collector Current

260 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS3

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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