Infineon FF2400R12IP7PBPSA1, Type N-Channel Half Bridge IGBT, 2400 A 1200 V Module, Screw
- RS庫存編號:
- 349-363
- 製造零件編號:
- FF2400R12IP7PBPSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 349-363
- 製造零件編號:
- FF2400R12IP7PBPSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 2400A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Half Bridge | |
| Package Type | Module | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 38.25mm | |
| Length | 247mm | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Width | 89 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 2400A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Half Bridge | ||
Package Type Module | ||
Mount Type Screw | ||
Channel Type Type N | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 38.25mm | ||
Length 247mm | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Width 89 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for high power applications, offering exceptional performance and reliability. It features the highest power density, enabling efficient operation in compact spaces. With best-in-class VCEsat, the module ensures low saturation voltage, improving overall efficiency and reducing power losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
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