Infineon FF2400R12IP7PBPSA1 Half Bridge IGBT, 2.4 kA 1200 V, Screw Mount
- RS庫存編號:
- 349-363
- 製造零件編號:
- FF2400R12IP7PBPSA1
- 製造商:
- Infineon
小計(1 件)*
TWD50,961.00
(不含稅)
TWD53,509.05
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD50,961.00 |
* 參考價格
- RS庫存編號:
- 349-363
- 製造零件編號:
- FF2400R12IP7PBPSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 2.4 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Configuration | Half Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 2.4 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for high power applications, offering exceptional performance and reliability. It features the highest power density, enabling efficient operation in compact spaces. With best-in-class VCEsat, the module ensures low saturation voltage, improving overall efficiency and reducing power losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
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