Infineon FS03MR12A7MA2BHPSA1, Type N-Channel Half Bridge IGBT, 310 A 1200 V HybridPACK Drive G2, Screw

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TWD74,498.00

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TWD78,222.90

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RS庫存編號:
349-191
製造零件編號:
FS03MR12A7MA2BHPSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

310A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

20mW

Number of Transistors

6

Package Type

HybridPACK Drive G2

Configuration

Half Bridge

Mount Type

Screw

Channel Type

Type N

Maximum Gate Emitter Voltage VGEO

19 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

200°C

Length

154.5mm

Width

100.5 mm

Standards/Approvals

RoHS, UL 94 V0

Automotive Standard

AQG 324

COO (Country of Origin):
DE
The Infineon Power module implements the second generation CoolSiC Automotive MOSFET 1200V. Its an optimized for electric drive train applications, from mid to high range automotive power classes to high range commercial, construction and agricultural vehicles.

High power density

Direct cooled PinFin base plate

Integrated temp sensing diode

PressFIT contact technology

Compact design

Higher temperature cycling capability

Integrated diode temperature sensors

New plastic material

Better temperature capability

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