onsemi NFAM3065L4BL, N-Channel 3 Phase IGBT, 30 A 650 V, 39-Pin DIP-39, Through Hole
- RS庫存編號:
- 277-038
- 製造零件編號:
- NFAM3065L4BL
- 製造商:
- onsemi
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- RS庫存編號:
- 277-038
- 製造零件編號:
- NFAM3065L4BL
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 113W | |
| Number of Transistors | 6 | |
| Configuration | 3 Phase | |
| Package Type | DIP-39 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 39 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.6mm | |
| Length | 54.5mm | |
| Standards/Approvals | Pb-Free, UL1557 (File No.339285), RoHS | |
| Width | 31mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 113W | ||
Number of Transistors 6 | ||
Configuration 3 Phase | ||
Package Type DIP-39 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 39 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.6mm | ||
Length 54.5mm | ||
Standards/Approvals Pb-Free, UL1557 (File No.339285), RoHS | ||
Width 31mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- VN
The ON Semiconductor Integrated Inverter Power Module features a high-side gate driver, LVIC, six IGBTs, and a temperature sensor (VTS), making it ideal for driving PMSM, BLDC, and AC asynchronous motors. The IGBTs are arranged in a three-phase bridge with separate emitter connections for the lower legs, allowing maximum flexibility in control algorithm selection.
Active logic interface
Built in undervoltage protection
Integrated bootstrap diodes and resistors
Separate low side IGBT emitter connections for individual current sensing of each phase
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