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選取全部	屬性	值
	品牌	onsemi
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	268 W
	Number of Transistors	1
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.87 x 4.82 x 20.82mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	選取全部
	品牌 onsemi
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 268 W
	Number of Transistors 1
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.87 x 4.82 x 20.82mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

Datasheet FGHL50T65SQ

Using the novel field stop 4th generation IGBT technology. FGHL50T65SQ is single IGBT. This IGBT offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6V (typ.) @ IC = 50A
High speed switching
Low consuction loss
Low switching loss
Applications
PFC
End Products
Power supply
Air conditioner

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

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