onsemi NCD57201DR2G, IGBT, 1.9 A 8-Pin 20V, SOIC
- RS庫存編號:
- 221-6601
- 製造零件編號:
- NCD57201DR2G
- 製造商:
- onsemi
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享受批量購買折扣
額外添加12500件可節省TWD6,250.00
查看批量定價選項小計（1 卷，共 2500 件）*
TWD70,500.00
(不含稅)
TWD74,025.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* | 節省 |
|---|---|---|---|
| 2500 - 10000 | TWD28.20 | TWD70,500.00 | - |
| 12500 + | TWD27.70 | TWD69,250.00 | TWD6,250.00 |
* 參考價格
- RS庫存編號:
- 221-6601
- 製造零件編號:
- NCD57201DR2G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 8ns | |
| Driver Type | IGBT | |
| Number of Outputs | 2 | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 4mm | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 8ns | ||
Driver Type IGBT | ||
Number of Outputs 2 | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 4mm | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanic ally isolated high or low side gate driver. It ca directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply.
Low output voltage drop for enhanced IGBT conduction
Floating channel for bootstrap operation up to +800 V
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V