onsemi NCV57200DR2G Gate Driver 2, 1.9 A 8-Pin 20 V, SOIC
- RS庫存編號:
- 205-2421
- 製造零件編號:
- NCV57200DR2G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD265.00
(不含稅)
TWD278.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,160 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD53.00 | TWD265.00 |
| 625 - 1245 | TWD51.40 | TWD257.00 |
| 1250 + | TWD50.80 | TWD254.00 |
* 參考價格
- RS庫存編號:
- 205-2421
- 製造零件編號:
- NCV57200DR2G
- 製造商:
- onsemi
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | General Purpose Driver | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 8ns | |
| Number of Outputs | 2 | |
| Driver Type | General Purpose | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type General Purpose Driver | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 8ns | ||
Number of Outputs 2 | ||
Driver Type General Purpose | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor high voltage gate driver with one non-isolated low side gate driver and one galvanic isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. An isolated high side driver can be powered with an isolated power supply or with Bootstrap technique from the low side power supply. This galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Package is SOIC-8 (Pb-Free)
High peak current output (+1.9A/-2.3A)
Low output voltage drop for enhanced IGBT conduction
Secured output low state without VDD/VB
Floating channel for Bootstrap operation up to +800V
CMTI up to 50kV/s
Reliable operation for VS negative swing to -800V
VDD & VBS supply range up to 20V