Infineon MOSFET Gate Driver 2, 1.9 A 8-Pin 20V, SOIC
- RS庫存編號:
- 226-6203
- 製造零件編號:
- IRS2183STRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD92,750.00
(不含稅)
TWD97,400.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD37.10 | TWD92,750.00 |
| 12500 + | TWD36.00 | TWD90,000.00 |
* 參考價格
- RS庫存編號:
- 226-6203
- 製造零件編號:
- IRS2183STRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Series | IRS2183 | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 40ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Height 1.75mm | ||
Series IRS2183 | ||
Width 4mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
Infineon IRS2183 Series Gate Driver, 10V Minimum Supply Voltage, 1.9A Output Current - IRS2183STRPBF
This gate driver is a dual-channel MOSFET driver designed to control switching transistors in power-conversion circuits, operating from a low-voltage supply to a moderate supply rail. It is supplied in a Compact surface-mount SOIC 8-pin package and intended for PCB-mounted applications that require precise drive of two outputs with Rapid switching characteristics.
Features and Benefits:
• 10V to 20V supply range enables flexible system voltage selection
• 1.9A output current delivers robust MOSFET gate charging capability
• 40ns rise time reduces turn-on transition losses
• 35ns fall time limits turn-off energy dissipation
• Operates from -40°C to 125°C for extended thermal tolerance
• Two drivers with two outputs support dual-device driving
• 1.9A output current delivers robust MOSFET gate charging capability
• 40ns rise time reduces turn-on transition losses
• 35ns fall time limits turn-off energy dissipation
• Operates from -40°C to 125°C for extended thermal tolerance
• Two drivers with two outputs support dual-device driving
Applications
• Suitable for driving complementary MOSFET pairs in DC-DC converters
• Ideal for use in half-bridge PWM switch stages
• Used with gate drive circuitry in motor-control inverters
• Can be used for synchronous rectifier gate control in supplies
• Used for Compact surface-mount power modules on space-constrained boards
• Ideal for use in half-bridge PWM switch stages
• Used with gate drive circuitry in motor-control inverters
• Can be used for synchronous rectifier gate control in supplies
• Used for Compact surface-mount power modules on space-constrained boards
What package dimensions influence board layout?
The device is offered in a small SOIC surface-mount body measuring 4 mm width, 5 mm length and 1.75 mm height which eases dense PCB placement.
How many outputs does the device provide and how are they arranged?
It provides two outputs driven by two internal drivers, allowing independent control of paired MOSFETs.
What thermal conditions can the device withstand during operation?
It supports operation across a wide ambient range from -40°C up to a maximum of 125°C for high-temperature deployment.
Is this suitable for automotive-standard designs?
It is not specified as meeting automotive standards and should be evaluated accordingly for vehicle-grade implementations.
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