onsemi NCD57201DR2G, IGBT, 1.9 A 8-Pin 20 V, SOIC
- RS庫存編號:
- 221-6602
- 製造零件編號:
- NCD57201DR2G
- 製造商:
- onsemi
可享批量折扣
小計(1 包,共 10 件)*
TWD398.00
(不含稅)
TWD417.90
(含稅)
添加 40 件 件可免費送貨
有庫存
- 加上 2,470 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD39.80 | TWD398.00 |
| 20 - 90 | TWD38.80 | TWD388.00 |
| 100 - 240 | TWD37.80 | TWD378.00 |
| 250 - 490 | TWD36.80 | TWD368.00 |
| 500 + | TWD36.00 | TWD360.00 |
* 參考價格
- RS庫存編號:
- 221-6602
- 製造零件編號:
- NCD57201DR2G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Fall Time | 8ns | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Fall Time 8ns | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanic ally isolated high or low side gate driver. It ca directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply.
Low output voltage drop for enhanced IGBT conduction
Floating channel for bootstrap operation up to +800 V
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V
