onsemi NCV57201DR2G, IGBT 2, 1.9 A 8-Pin 20 V, SOIC
- RS庫存編號:
- 221-6668
- 製造零件編號:
- NCV57201DR2G
- 製造商:
- onsemi
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可享批量折扣
小計（1 包，共 5 件）*
TWD278.00
(不含稅)
TWD291.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,470 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD55.60 | TWD278.00 |
| 10 - 95 | TWD54.00 | TWD270.00 |
| 100 - 245 | TWD53.00 | TWD265.00 |
| 250 - 495 | TWD51.60 | TWD258.00 |
| 500 + | TWD50.60 | TWD253.00 |
* 參考價格
- RS庫存編號:
- 221-6668
- 製造零件編號:
- NCV57201DR2G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Driver Type | IGBT | |
| Number of Outputs | 2 | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Driver Type IGBT | ||
Number of Outputs 2 | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Matched propagation delay 90 ns
Built−in 20 ns minimum pulse width filter
Non−inverting output signal
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V