Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GZBIBA

RS庫存編號:: 188-2874
製造零件編號:: W29N02GZBIBA
製造商:: Winbond

Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GZBIBA

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 2 件）*

TWD416.00

(不含稅)

TWD436.80

添加 8 件件可免費送貨

下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。

有庫存

114 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
2 - 52	TWD208.00	TWD416.00
54 - 104	TWD203.00	TWD406.00
106 +	TWD200.00	TWD400.00

* 參考價格

RS庫存編號:: 188-2874
製造零件編號:: W29N02GZBIBA
製造商:: Winbond

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Winbond
	Memory Size	2GB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	256M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Minimum Supply Voltage	1.7V
	Maximum Supply Voltage	1.95V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Height	0.6mm
	Width	11.1 mm
	Standards/Approvals	No
	Length	11.1mm
	Series	W29N02GZ
	Automotive Standard	No
	Number of Words	256M
	Maximum Random Access Time	25μs
	Number of Bits per Word	8
	Supply Current	20mA

	選取全部
	品牌 Winbond
	Memory Size 2GB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 256M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Minimum Supply Voltage 1.7V
	Maximum Supply Voltage 1.95V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Height 0.6mm
	Width 11.1 mm
	Standards/Approvals No
	Length 11.1mm
	Series W29N02GZ
	Automotive Standard No
	Number of Words 256M
	Maximum Random Access Time 25μs
	Number of Bits per Word 8
	Supply Current 20mA

Datasheet W29N02GZBIBA

Density : 2Gbit (Single chip solution)

Vcc : 1.7V to 1.95V

Bus width : x8 x16

Operating temperature

Industrial: -40°C to 85°C

Industrial Plus: -40°C to 105°C

Single-Level Cell (SLC) technology.

Organization

Density: 2G-bit/256M-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command

Additional command suppo

Copy Back

Two-plane operation

Contact Winbond for OTP f

Contact Winbond for Block

Lowest power consumption

Read: 13mA(typ.)

Program/Erase: 10mA(typ.)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GZBIBA

添加 8 件 件可免費送貨

相關連結

添加 8 件件可免費送貨