Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

RS庫存編號:: 188-2551
製造零件編號:: W29N01HVBINF
製造商:: Winbond

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 托盤，共 210 件）*

TWD20,496.00

(不含稅)

TWD21,520.80

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月21日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每托盤*
210 - 840	TWD97.60	TWD20,496.00
1050 +	TWD87.80	TWD18,438.00

* 參考價格

RS庫存編號:: 188-2551
製造零件編號:: W29N01HVBINF
製造商:: Winbond

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Winbond
	Memory Size	1GB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Mount Type	Surface
	Cell Type	SLC NAND
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Height	0.6mm
	Length	11.1mm
	Standards/Approvals	No
	Automotive Standard	No
	Maximum Random Access Time	25μs
	Number of Words	128M
	Supply Current	35mA
	Number of Bits per Word	8
	Series	W29N01HV

	選取全部
	品牌 Winbond
	Memory Size 1GB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Mount Type Surface
	Cell Type SLC NAND
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Height 0.6mm
	Length 11.1mm
	Standards/Approvals No
	Automotive Standard No
	Maximum Random Access Time 25μs
	Number of Words 128M
	Supply Current 35mA
	Number of Bits per Word 8
	Series W29N01HV

Datasheet W29N01HVBINF

Density : 1Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Lowest power consumption

Read: 25mA(typ.3V),

Program/Erase: 25mA(typ.3V),

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

訂單超過 $1,300.00 免費送貨

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