Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

RS庫存編號:: 188-2554
製造零件編號:: W29N01HZBINA
製造商:: Winbond

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 托盤，共 210 件）*

TWD24,591.00

(不含稅)

TWD25,821.60

添加 210 件件可免費送貨

下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。

暫時缺貨

從 2026年6月26日發貨

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單位	每單位	每托盤*
210 - 840	TWD117.10	TWD24,591.00
1050 +	TWD114.70	TWD24,087.00

* 參考價格

RS庫存編號:: 188-2554
製造零件編號:: W29N01HZBINA
製造商:: Winbond

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Winbond
	Memory Size	1GB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	128M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Minimum Supply Voltage	1.7V
	Maximum Supply Voltage	1.95V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Height	0.6mm
	Length	11.1mm
	Width	11.1 mm
	Standards/Approvals	No
	Supply Current	25mA
	Series	W29N01HZ
	Automotive Standard	No
	Maximum Random Access Time	25μs
	Number of Bits per Word	8
	Number of Words	128M

	選取全部
	品牌 Winbond
	Memory Size 1GB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 128M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Minimum Supply Voltage 1.7V
	Maximum Supply Voltage 1.95V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Height 0.6mm
	Length 11.1mm
	Width 11.1 mm
	Standards/Approvals No
	Supply Current 25mA
	Series W29N01HZ
	Automotive Standard No
	Maximum Random Access Time 25μs
	Number of Bits per Word 8
	Number of Words 128M

Datasheet W29N01HZBINA

Density : 1Gbit (Single chip solution)

Vcc : 1.7V to 1.95V

Bus width : x8 x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command s

Additional command support

Copy Back

Lowest power consumption

Read: 13 mA(typ.)

Program/Erase:10mA(typ)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

68-ball WLCSP

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

添加 210 件 件可免費送貨

相關連結

添加 210 件件可免費送貨