Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA

RS庫存編號:: 188-2567
製造零件編號:: W29N08GZBIBA
製造商:: Winbond

Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA

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小計（1 托盤，共 210 件）*

TWD278,439.00

(不含稅)

TWD292,362.00

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單位	每單位	每托盤*
210 - 840	TWD1,325.90	TWD278,439.00
1050 +	TWD1,299.30	TWD272,853.00

* 參考價格

RS庫存編號:: 188-2567
製造零件編號:: W29N08GZBIBA
製造商:: Winbond

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產品詳細資訊

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選取全部	屬性	值
	品牌	Winbond
	Memory Size	8GB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	1024 x 8 bit
	Mount Type	Surface
	Maximum Clock Frequency	40MHz
	Cell Type	SLC NAND
	Maximum Supply Voltage	1.95V
	Minimum Supply Voltage	1.7V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Width	11.1mm
	Height	600μm
	Length	11.1mm
	Standards/Approvals	No
	Automotive Standard	No
	Number of Words	1024K
	Series	W29N08GZ
	Maximum Random Access Time	25μs
	Number of Bits per Word	8

	選取全部
	品牌 Winbond
	Memory Size 8GB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 1024 x 8 bit
	Mount Type Surface
	Maximum Clock Frequency 40MHz
	Cell Type SLC NAND
	Maximum Supply Voltage 1.95V
	Minimum Supply Voltage 1.7V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Width 11.1mm
	Height 600μm
	Length 11.1mm
	Standards/Approvals No
	Automotive Standard No
	Number of Words 1024K
	Series W29N08GZ
	Maximum Random Access Time 25μs
	Number of Bits per Word 8

Datasheet W29N08GZBIBA

Density : 8Gbit (2 chip stacked solution)

Vcc : 1.7V to 1.95V

Bus width : x8/x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 8G-bit/1G-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 35ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 13mA(typ.)

Program/Erase: 13mA(typ.)

CMOS standby: 20uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA

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