Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA

RS庫存編號:: 188-2657
製造零件編號:: W29N08GZBIBA
製造商:: Winbond

Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD764.00

(不含稅)

TWD802.20

添加 2 件件可免費送貨

下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。

最後的 RS 庫存

最終 56 個，準備發貨

單位	每單位
1 - 52	TWD764.00
53 - 104	TWD745.00
105 +	TWD735.00

* 參考價格

RS庫存編號:: 188-2657
製造零件編號:: W29N08GZBIBA
製造商:: Winbond

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Winbond
	Memory Size	8GB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	1024 x 8 bit
	Maximum Clock Frequency	40MHz
	Mount Type	Surface
	Cell Type	SLC NAND
	Minimum Supply Voltage	1.7V
	Maximum Supply Voltage	1.95V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Width	11.1 mm
	Height	0.6mm
	Length	11.1mm
	Standards/Approvals	No
	Number of Bits per Word	8
	Number of Words	1024K
	Series	W29N08GZ
	Maximum Random Access Time	25μs
	Automotive Standard	No

	選取全部
	品牌 Winbond
	Memory Size 8GB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 1024 x 8 bit
	Maximum Clock Frequency 40MHz
	Mount Type Surface
	Cell Type SLC NAND
	Minimum Supply Voltage 1.7V
	Maximum Supply Voltage 1.95V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Width 11.1 mm
	Height 0.6mm
	Length 11.1mm
	Standards/Approvals No
	Number of Bits per Word 8
	Number of Words 1024K
	Series W29N08GZ
	Maximum Random Access Time 25μs
	Automotive Standard No

Datasheet W29N08GZBIBA

Density : 8Gbit (2 chip stacked solution)

Vcc : 1.7V to 1.95V

Bus width : x8/x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 8G-bit/1G-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 35ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 13mA(typ.)

Program/Erase: 13mA(typ.)

CMOS standby: 20uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA

添加 2 件 件可免費送貨

相關連結

添加 2 件件可免費送貨