Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAF

RS庫存編號:: 188-2841
製造零件編號:: W29N02GVBIAF
製造商:: Winbond

Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAF

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TWD412.00

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TWD432.60

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最終 10 個，準備發貨

單位	每單位	每包*
2 - 52	TWD206.00	TWD412.00
54 - 104	TWD201.00	TWD402.00
106 +	TWD198.00	TWD396.00

* 參考價格

RS庫存編號:: 188-2841
製造零件編號:: W29N02GVBIAF
製造商:: Winbond

規格

產品概覽和技術數據資料表

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產品詳細資訊

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選取全部	屬性	值
	品牌	Winbond
	Product Type	Flash Memory
	Memory Size	2GB
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	256M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Minimum Supply Voltage	2.7V
	Maximum Supply Voltage	3.6V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Length	11.1mm
	Width	9.1 mm
	Standards/Approvals	No
	Height	0.6mm
	Series	W29N02GV
	Maximum Random Access Time	25μs
	Supply Current	35mA
	Number of Bits per Word	8
	Number of Words	256M
	Automotive Standard	No

	選取全部
	品牌 Winbond
	Product Type Flash Memory
	Memory Size 2GB
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 256M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Minimum Supply Voltage 2.7V
	Maximum Supply Voltage 3.6V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Length 11.1mm
	Width 9.1 mm
	Standards/Approvals No
	Height 0.6mm
	Series W29N02GV
	Maximum Random Access Time 25μs
	Supply Current 35mA
	Number of Bits per Word 8
	Number of Words 256M
	Automotive Standard No

Datasheet W29N02GVBIAF

Density : 2Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 2G-bit/256M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(2)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for block Lock feature

Lowest power consumption

Read: 25mA(typ.3V)

Program/Erase: 25mA(typ.3V)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAF

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