Infineon BFP650FH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1444
- 製造零件編號:
- BFP650FH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
TWD310.00
(不含稅)
TWD325.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,450 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD12.40 | TWD310.00 |
| 50 - 75 | TWD11.80 | TWD295.00 |
| 100 - 225 | TWD11.10 | TWD277.50 |
| 250 - 975 | TWD10.30 | TWD257.50 |
| 1000 + | TWD10.10 | TWD252.50 |
* 參考價格
- RS庫存編號:
- 259-1444
- 製造零件編號:
- BFP650FH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 42GHz | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.4mm | |
| Series | BFP | |
| Height | 0.55mm | |
| Width | 1.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 42GHz | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 1.4mm | ||
Series BFP | ||
Height 0.55mm | ||
Width 1.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon high linearity low noise SiGe:C NPN RF transistor, It is easy to use Pb-free (RoHS compliant) standard package with visible leads.
Driver amplifier
ISM bands 434 and 868 MHz
1.9 GHz Cordless phones
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