Infineon BFP620H7764XTSA1 RF Bipolar Transistor, 7.5 mA NPN, 80 V, 4-Pin SOT-343
- RS庫存編號:
- 259-1437
- 製造零件編號:
- BFP620H7764XTSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 10 件）*
TWD135.00
(不含稅)
TWD141.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,990 件從 2026年9月07日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD13.50 | TWD135.00 |
| 50 - 90 | TWD12.70 | TWD127.00 |
| 100 - 240 | TWD12.10 | TWD121.00 |
| 250 - 990 | TWD11.10 | TWD111.00 |
| 1000 + | TWD11.00 | TWD110.00 |
* 參考價格
- RS庫存編號:
- 259-1437
- 製造零件編號:
- BFP620H7764XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 7.5mA | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 7.5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 185mW | |
| Maximum Transition Frequency ft | 65GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Width | 1.25mm | |
| Series | BFP620 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 7.5mA | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 7.5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 185mW | ||
Maximum Transition Frequency ft 65GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Width 1.25mm | ||
Series BFP620 | ||
Automotive Standard AEC-Q101 | ||
The Infineon highly linear low noise RF transistor provides outstanding performance for a wide range of wireless applications. It is based on Infineon's reliable high volume SiGe:C technology & Ideal for CDMA and WLAN applications.
Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application
Accurate SPICE GP model enables effective design in process
Pb-free (RoHS compliant) package
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