製造零件編號

Alliance Memory AS4C4M16SA-7TCN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

RS庫存編號:: 230-8433
製造零件編號:: AS4C4M16SA-7TCN
製造商:: Alliance Memory

Alliance Memory AS4C4M16SA-7TCN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

可享批量折扣

小計（1 托盤，共 108 件）*

TWD7,776.00

(不含稅)

TWD8,164.80

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月02日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每托盤*
108 - 216	TWD72.00	TWD7,776.00
324 - 432	TWD69.90	TWD7,549.20
540 - 972	TWD67.80	TWD7,322.40
1080 +	TWD65.80	TWD7,106.40

* 參考價格

RS庫存編號:: 230-8433
製造零件編號:: AS4C4M16SA-7TCN
製造商:: Alliance Memory

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Alliance Memory
	Memory Size	64Mbit
	SDRAM Class	DDR
	Organisation	4M x 16
	Data Rate	200MHz
	Data Bus Width	16bit
	Address Bus Width	12bit
	Number of Bits per Word	16bit
	Maximum Random Access Time	5.4ns
	Number of Words	4M
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	54
	Dimensions	22.35 x 10.29 x 1.2mm
	Height	1.2mm
	Length	22.35mm
	Minimum Operating Temperature	0 °C
	Maximum Operating Supply Voltage	3.6 V
	Minimum Operating Supply Voltage	3 V
	Maximum Operating Temperature	+70 °C
	Width	10.29mm

	選取全部
	品牌 Alliance Memory
	Memory Size 64Mbit
	SDRAM Class DDR
	Organisation 4M x 16
	Data Rate 200MHz
	Data Bus Width 16bit
	Address Bus Width 12bit
	Number of Bits per Word 16bit
	Maximum Random Access Time 5.4ns
	Number of Words 4M
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 54
	Dimensions 22.35 x 10.29 x 1.2mm
	Height 1.2mm
	Length 22.35mm
	Minimum Operating Temperature 0 °C
	Maximum Operating Supply Voltage 3.6 V
	Minimum Operating Supply Voltage 3 V
	Maximum Operating Temperature +70 °C
	Width 10.29mm

Datasheet - AS4C4M16SA-7TCN

The Alliance Memory 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Fast access time from clock: 4.5/5.4/5.4 ns
Fast clock rate: 200/166/143 MHz
Fully synchronous operation
Internal pipelined architecture
1M word x 16-bit x 4-bank

Alliance Memory AS4C4M16SA-7TCN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

相關連結