Alliance Memory AS4C32M16SB-7TIN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP
- RS庫存編號:
- 230-8428
- 製造零件編號:
- AS4C32M16SB-7TIN
- 製造商:
- Alliance Memory
可享批量折扣
小計(1 件)*
TWD496.00
(不含稅)
TWD520.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 93 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD496.00 |
| 10 - 24 | TWD483.00 |
| 25 - 49 | TWD470.00 |
| 50 - 74 | TWD459.00 |
| 75 + | TWD448.00 |
* 參考價格
- RS庫存編號:
- 230-8428
- 製造零件編號:
- AS4C32M16SB-7TIN
- 製造商:
- Alliance Memory
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Alliance Memory | |
| Memory Size | 512Mbit | |
| Organisation | 32M x 16 | |
| SDRAM Class | DDR | |
| Data Rate | 200MHz | |
| Data Bus Width | 16bit | |
| Address Bus Width | 13bit | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 5.4ns | |
| Number of Words | 32 M | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 54 | |
| Dimensions | 22.35 x 10.29 x 1.2mm | |
| Height | 1.2mm | |
| Length | 22.35mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 10.29mm | |
| Minimum Operating Supply Voltage | 3 V | |
| 選取全部 | ||
|---|---|---|
品牌 Alliance Memory | ||
Memory Size 512Mbit | ||
Organisation 32M x 16 | ||
SDRAM Class DDR | ||
Data Rate 200MHz | ||
Data Bus Width 16bit | ||
Address Bus Width 13bit | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 5.4ns | ||
Number of Words 32 M | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 54 | ||
Dimensions 22.35 x 10.29 x 1.2mm | ||
Height 1.2mm | ||
Length 22.35mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 10.29mm | ||
Minimum Operating Supply Voltage 3 V | ||
The Alliance Memory 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.
Auto Refresh and Self Refresh
8192 refresh cycles/64ms
CKE power down mode
Single +3.3V ±0.3V power supply
8192 refresh cycles/64ms
CKE power down mode
Single +3.3V ±0.3V power supply
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
- Alliance Memory AS4C32M16SB-7TIN 200MHz 54-Pin TSOP
- Alliance Memory AS4C32M16SB-7TCN 200MHz 54-Pin TSOP
- Alliance Memory AS4C4M16SA-6TIN 200MHz 54-Pin TSOP
- Alliance Memory AS4C4M16SA-7TCN 200MHz 54-Pin TSOP
- Alliance Memory AS4C4M16SA-7BCN 200MHz 54-Pin FBGA
- Alliance Memory AS4C16M16SA-7TCN 166MHz 54-Pin TSOP
- Alliance Memory AS4C16M16SA-7TCNTR 166MHz 54-Pin TSOP
- Alliance Memory AS4C8M16SA-7TCN 166MHz 54-Pin TSOP
