onsemi 1200 V 26 A Diode Schottky 2-Pin TO-247 FFSH15120A
- RS庫存編號:
- 178-4446
- 製造零件編號:
- FFSH15120A
- 製造商:
- onsemi
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TWD354.00
(不含稅)
TWD371.70
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 745 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 7 | TWD354.00 |
| 8 - 14 | TWD251.00 |
| 15 + | TWD248.00 |
* 參考價格
- RS庫存編號:
- 178-4446
- 製造零件編號:
- FFSH15120A
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 920A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 400μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 920A | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 400μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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