onsemi 1200 V 40 A Rectifier & Schottky Diode Schottky 3-Pin TO-247-3LD
- RS庫存編號:
- 261-9556
- 製造零件編號:
- NDSH40120CDN
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 450 件）*
TWD161,685.00
(不含稅)
TWD169,767.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月14日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 450 | TWD359.30 | TWD161,685.00 |
| 900 + | TWD352.10 | TWD158,445.00 |
* 參考價格
- RS庫存編號:
- 261-9556
- 製造零件編號:
- NDSH40120CDN
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH40120CDN | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 123A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.82mm | |
| Standards/Approvals | RoHS | |
| Length | 41.07mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH40120CDN | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 123A | ||
Maximum Operating Temperature 175°C | ||
Height 4.82mm | ||
Standards/Approvals RoHS | ||
Length 41.07mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L
The ON Semiconductor schottky diodes & rectifiers silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It consist of no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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