onsemi 1200 V 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- RS庫存編號:
- 218-673
- 製造零件編號:
- NDSH20120C-F155
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 1 件）*
TWD289.00
(不含稅)
TWD303.45
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月22日 發貨
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包 | 每包 |
|---|---|
| 1 - 9 | TWD289.00 |
| 10 - 99 | TWD260.00 |
| 100 - 499 | TWD240.00 |
| 500 - 999 | TWD223.00 |
| 1000 + | TWD199.00 |
* 參考價格
- RS庫存編號:
- 218-673
- 製造零件編號:
- NDSH20120C-F155
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 896A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 896A | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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