Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220 IDH20G120C5XKSA1
- RS庫存編號:
- 133-9945
- 製造零件編號:
- IDH20G120C5XKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 件)*
TWD254.00
(不含稅)
TWD266.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9 件從 2026年9月14日 起發貨
- 加上 749 件從 2026年9月21日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 124 | TWD254.00 |
| 125 + | TWD238.00 |
* 參考價格
- RS庫存編號:
- 133-9945
- 製造零件編號:
- IDH20G120C5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 56A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH20G120C5 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 198A | |
| Peak Reverse Current Ir | 630μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Width | 4.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 56A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH20G120C5 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 198A | ||
Peak Reverse Current Ir 630μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Width 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
相關連結
- Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220 IDH10G120C5XKSA1
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220 IDH08G120C5XKSA1
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220 IDH02G120C5XKSA1
- Infineon 1200 V 5 A Diode PG-TO-220
