Infineon 1.2 kV 11.8 A Diode Schottky 3-Pin TO-220 IDH02G120C5XKSA1
- RS庫存編號:
- 133-9852
- 製造零件編號:
- IDH02G120C5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
享受批量購買折扣
額外添加126件可節省1%
查看批量定價選項小計（1 包，共 2 件）*
TWD247.00
(不含稅)
TWD259.36
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 2 - 124 | TWD123.50 | TWD247.00 | - |
| 126 - 248 | TWD122.00 | TWD244.00 | 1% |
| 250 + | TWD121.00 | TWD242.00 | 2% |
* 參考價格
- RS庫存編號:
- 133-9852
- 製造零件編號:
- IDH02G120C5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 11.8A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | IDH02G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 37A | |
| Peak Reverse Current Ir | 90μA | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.5mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 11.8A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series IDH02G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 37A | ||
Peak Reverse Current Ir 90μA | ||
Maximum Operating Temperature 175°C | ||
Width 4.5mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
相關連結
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220 IDH02G120C5XKSA1
- Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220 IDH20G120C5XKSA1
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220 IDH08G120C5XKSA1
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220 IDH10G120C5XKSA1
- Infineon 1200 V 5 A Diode PG-TO-220 IDH05G120C5XKSA1
- Wolfspeed 1200 V 14 A Diode Schottky 2-Pin TO-220
- Wolfspeed 1200 V 10 A Diode Schottky 2-Pin TO-220
- Infineon 650 V 4 A Schottky Diode Schottky 2-Pin TO-220 IDH04G65C6XKSA1