Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220 IDH08G120C5XKSA1
- RS庫存編號:
- 133-9899
- 製造零件編號:
- IDH08G120C5XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 件）*
TWD152.00
(不含稅)
TWD159.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 500 件從 2026年11月05日 起裝運發貨
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單位 | 每單位 |
|---|---|
| 1 - 124 | TWD152.00 |
| 125 - 249 | TWD148.00 |
| 250 + | TWD140.00 |
* 參考價格
- RS庫存編號:
- 133-9899
- 製造零件編號:
- IDH08G120C5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 22.8A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDH08G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 210μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Maximum Forward Voltage Vf | 2.85V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.5mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 22.8A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDH08G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 210μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Maximum Forward Voltage Vf 2.85V | ||
Maximum Operating Temperature 175°C | ||
Width 4.5mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
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