IXYS Type N-Channel MOSFET, 36 A, 600 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 920-0763
- 製造零件編號:
- IXFH36N60P
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD8,049.00
(不含稅)
TWD8,451.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月31日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD268.30 | TWD8,049.00 |
| 60 - 90 | TWD262.40 | TWD7,872.00 |
| 120 + | TWD256.60 | TWD7,698.00 |
* 參考價格
- RS庫存編號:
- 920-0763
- 製造零件編號:
- IXFH36N60P
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 650W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 650W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Width 5.3 mm | ||
Automotive Standard No | ||
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