IXYS Type N-Channel MOSFET, 24 A, 800 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 920-0754
- 製造零件編號:
- IXFH24N80P
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD9,087.00
(不含稅)
TWD9,541.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 30 件從 2026年4月01日 起裝運發貨
- 加上 30 件從 2026年8月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD302.90 | TWD9,087.00 |
| 60 - 90 | TWD296.30 | TWD8,889.00 |
| 120 + | TWD289.70 | TWD8,691.00 |
* 參考價格
- RS庫存編號:
- 920-0754
- 製造零件編號:
- IXFH24N80P
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 650W | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Width | 5.3 mm | |
| Height | 21.46mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 650W | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Width 5.3 mm | ||
Height 21.46mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
相關連結
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 IXFH24N80P
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247