Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 919-4882
- 製造零件編號:
- IRL540NPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD1,220.00
(不含稅)
TWD1,281.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 650 件從 2026年3月10日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD24.40 | TWD1,220.00 |
| 100 - 150 | TWD24.10 | TWD1,205.00 |
| 200 + | TWD22.30 | TWD1,115.00 |
* 參考價格
- RS庫存編號:
- 919-4882
- 製造零件編號:
- IRL540NPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Width | 4.69 mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Width 4.69 mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF
This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.
Features & Benefits
• Continuous drain current capability of 36A for demanding applications
• Low Rds(on) of 44mΩ minimises power losses during operation
• Enhancement mode design improves switching characteristics for efficiency
• Power dissipation rating of up to 140W accommodates high-performance scenarios
• Operating temperature range from -55°C to +175°C allows versatility
• Through hole mounting facilitates easy integration into existing systems
Applications
• Power management in industrial automation systems
• Electric motor control in robotics
• DC-DC converters in renewable energy systems
• Power supplies requiring efficient switching functionality
• Consumer electronics for effective power distribution
What are the maximum voltage and current ratings?
The maximum drain-source voltage is 100V, with a continuous drain current of 36A.
How does the low Rds(on) improve performance?
A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.
What is the significance of the enhancement mode?
This mode allows for improved control over operation, enabling efficient switching and application versatility.
Can it be used in high-temperature environments?
Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.
How should it be mounted for optimal performance?
It is designed for through hole mounting, ensuring secure installation and connectivity in circuits.
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