Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 919-4860
- 製造零件編號:
- IRF9530NPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD910.00
(不含稅)
TWD955.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 750 件準備從其他地點送貨
- 加上 13,750 件從 2026年1月29日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD18.20 | TWD910.00 |
| 100 - 150 | TWD18.00 | TWD900.00 |
| 200 + | TWD16.70 | TWD835.00 |
* 參考價格
- RS庫存編號:
- 919-4860
- 製造零件編號:
- IRF9530NPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | -1.6V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf -1.6V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF
This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.
Features & Benefits
• Maximum continuous drain current of 14A for robust performance
• Compatible with drain-source voltages of up to 100V for versatility
• Low on-resistance of 200mΩ enhances power efficiency
• TO-220AB package design facilitates easy mounting and heat dissipation
• Enhancement mode operation ensures dependable switching performance
• High gate threshold voltage of 4V allows for effective control
Applications
• Suitable for integration into power supply circuits
• Utilised in motor control systems for improved efficiency
• Applicable in power converters for enhanced energy management
• Ideal for power switching in electronic devices
• Employed in high current driver circuits for dependability
How can the operating temperature range affect usage?
The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.
What are the implications of the maximum power dissipation specification?
With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.
Can it be used in parallel configurations for increased current capacity?
Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.
What precautions should be taken during installation?
Proper heat sinking is essential to prevent overheating; it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.
How does device selection impact overall circuit performance?
Choosing the appropriate specifications improves circuit efficiency, reducing power losses and enhancing overall system performance, especially in high-demand applications.
相關連結
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9530NPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
