Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF
- RS庫存編號:
- 919-4867
- 製造零件編號:
- IRF9Z34NPBF
- 製造商:
- Infineon
可享批量折扣
單價 毎管：50 個**
原價 TWD17.12
您付款
TWD13.60
(不含稅)
TWD14.28
(含稅)
100 現貨庫存，可於6工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 TWD1,300.00 (未稅) 即可享受 免費 送貨服務
即時庫存查詢
單位 | 每單位 | 每管** |
|---|---|---|
| 50 - 50 | TWD13.60 | TWD680.00 |
| 100 - 150 | TWD13.30 | TWD665.00 |
| 200 + | TWD12.40 | TWD620.00 |
** 參考價格
- RS庫存編號:
- 919-4867
- 製造零件編號:
- IRF9Z34NPBF
- 製造商:
- Infineon
- COO (Country of Origin):
- CN
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF
This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.
Features & Benefits
• High current capacity meets significant load requirements
• Maximum power dissipation of 68W improves durability
• Enhancement mode design supports efficient switching performance
• Low gate charge allows for quicker operation
• Effective thermal characteristics ensure stable performance at elevated temperatures
• TO-220AB package offers convenient integration into circuits
• Maximum power dissipation of 68W improves durability
• Enhancement mode design supports efficient switching performance
• Low gate charge allows for quicker operation
• Effective thermal characteristics ensure stable performance at elevated temperatures
• TO-220AB package offers convenient integration into circuits
Applications
• Suitable for power supply circuits prioritising efficiency
• Perfect for motor control in automation systems
• Appropriate for high-frequency switching scenarios
• Employed in power management systems to enhance performance
• Perfect for motor control in automation systems
• Appropriate for high-frequency switching scenarios
• Employed in power management systems to enhance performance
What is the maximum temperature for this MOSFET?
It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.
How does it handle gate-source voltage variations?
It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.
What is the significance of its low drain-source resistance?
A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.
Can it be used in high-frequency applications?
Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.
How is the thermal performance managed in practical applications?
The high power dissipation capacity of 68W aids in effective heat management during operation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 55 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 68 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Length | 10.54mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.69mm |
| Height | 8.77mm |
| Forward Diode Voltage | 1.6V |
| Minimum Operating Temperature | -55 °C |