Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220

RS庫存編號:: 919-4772
製造零件編號:: IRF4905PBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220

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可享批量折扣

小計（1 管，共 50 件）*

TWD1,875.00

(不含稅)

TWD1,969.00

訂單超過 $1,300.00 免費送貨

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50 件準備從其他地點送貨
加上 1,000 件從 2026年1月22日起發貨

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單位	每單位	每管*
50 - 50	TWD37.50	TWD1,875.00
100 - 150	TWD36.60	TWD1,830.00
200 +	TWD34.00	TWD1,700.00

* 參考價格

RS庫存編號:: 919-4772
製造零件編號:: IRF4905PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.6V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	200W
	Typical Gate Charge Qg @ Vgs	180nC
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Length	10.54mm
	Standards/Approvals	No
	Height	8.77mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.6V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 200W
	Typical Gate Charge Qg @ Vgs 180nC
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Length 10.54mm
	Standards/Approvals No
	Height 8.77mm
	Automotive Standard No

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COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF

This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.

Features & Benefits

• High continuous drain current capability of 74A supports demanding applications

• Maximum drain-source voltage of 55V enables effective power management

• Low on-resistance of 20mΩ improves energy efficiency

• Designed as an enhancement mode MOSFET for precise control

• Utilises a TO-220AB package for easy mounting and integration

Applications

• Used in DC-DC converters for efficient power conversion

• Ideal for motor control requiring substantial current management

• Employed in power supplies for streamlined operation

• Suitable for thermal management in high-load environments

• Used in automation systems for dependable switching

How does the low on-resistance benefit circuit design?

The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.

What is the significance of using a TO-220AB package?

The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.

Can this component handle high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.

What kind of applications require this MOSFET's high continuous drain current?

The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.

How does the gate-threshold voltage impact its performance?

A gate threshold voltage ranging from 2V to 4V ensures reliable switching behaviour, contributing to precise control in various electronic circuits.