Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220 IRF5305PBF

RS庫存編號:: 541-1736
Distrelec 貨號:: 303-41-281
製造零件編號:: IRF5305PBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220 IRF5305PBF

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 件）*

TWD41.00

(不含稅)

TWD43.05

訂單超過 $1,300.00 免費送貨

有庫存

214 件準備從其他地點送貨
加上 540 件從 2026年1月12日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 +	TWD41.00

* 參考價格

RS庫存編號:: 541-1736
Distrelec 貨號:: 303-41-281
製造零件編號:: IRF5305PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	110W
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	30341281

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 110W
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 30341281

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF

This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

Features & Benefits

• Continuous drain current capacity of 31A supports demanding applications

• Voltage rating of 55V facilitates dependable switching

• Low on-resistance of 60mΩ reduces power loss

• TO-220AB package design enhances thermal performance

• Gate-source voltage range of ±20V accommodates diverse applications

• Rapid switching optimisation boosts overall system efficiency

Applications

• Used in motor control systems for efficient operation

• Applicable in power supply circuits for stable performance

• Integrated into electronic devices requiring effective switching capabilities

• Suitable for deployment in renewable energy systems

What is the temperature range for operation?

It operates within -55°C to +175°C, making it apt for extreme conditions.

How does the package type affect performance?

The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Can it handle pulsed drain current applications?

Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

What type of transistor is this?

It is a P-channel Si MOSFET, optimised for high-efficiency applications.

Is it compatible with automated assembly processes?

Yes, the through-hole design allows for integration into automated systems and circuit boards.