Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 919-0275
- 製造零件編號:
- SI2325DS-T1-E3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD57,000.00
(不含稅)
TWD59,850.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD19.00 | TWD57,000.00 |
| 15000 + | TWD18.60 | TWD55,800.00 |
* 參考價格
- RS庫存編號:
- 919-0275
- 製造零件編號:
- SI2325DS-T1-E3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -530mA | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | SOT-23 | |
| Series | Si2325DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 750mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -530mA | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type SOT-23 | ||
Series Si2325DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 750mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.04mm | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2325DS Series MOSFET, -150V Maximum Drain Source Voltage, 1.2Ω Maximum Drain Source Resistance - SI2325DS-T1-E3
This p-channel MOSFET is a surface-mount semiconductor device designed for high-voltage switching and control in Compact assemblies. It functions as an enhancement-mode transistor suitable for use where reverse-polarity or high-side switching is required, and is optimised for low-power dissipation in small form-factor SOT-23 packages. The device operates across a wide temperature range, making it appropriate for varied industrial electronic contexts.
Features and Benefits:
• Maximum drain-source voltage supports 150V applications • Drain-source resistance of 1.2Ω reduces conduction losses • Continuous drain current of -530mA permits modest load driving • Typical gate charge of 7.7nC enables Faster gate transitions • Power dissipation rating of 750mW limits thermal build-up • Gate-source voltage tolerance of 20V allows robust drive margins
Applications
• Suitable for high-voltage load switching in automation systems • Ideal for high-side switching in control and power modules • Used for reverse-polarity protection in electronic designs • Can be used for level-shifted gate-drive circuits • Suitable for Compact power-management boards in instrumentation
What are the thermal limits for reliable operation?
The device is specified to operate between -55°C and 150°C, allowing use across typical industrial temperature ranges.
How does the package influence board layout?
The SOT-23 surface-mount package with three pins and Compact footprint supports dense assembly and straightforward thermal via placement for heat management.
What electrical constraint should designers observe for gate driving?
Designers must restrict gate-source voltage within ±20V to avoid gate dielectric stress and ensure long-term reliability.
How should power dissipation considerations affect cooling strategy?
With a 750mW dissipation rating, designers should provide adequate copper area or heatsinking on the PCB to maintain junction temperatures under load.
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