Vishay IRFIZ48G Type N-Channel Power MOSFET, 37 A, 60 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 918-9865
- 製造零件編號:
- IRFIZ48GPBF
- 製造商:
- Vishay
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查看批量定價選項小計(1 管,共 50 件)*
TWD2,210.00
(不含稅)
TWD2,320.50
(含稅)
訂單超過 $1,300.00 免費送貨
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- 150 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD44.20 | TWD2,210.00 |
| 100 - 150 | TWD43.20 | TWD2,160.00 |
| 200 + | TWD42.30 | TWD2,115.00 |
* 參考價格
- RS庫存編號:
- 918-9865
- 製造零件編號:
- IRFIZ48GPBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IRFIZ48G | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.3mm | |
| Standards/Approvals | No | |
| Width | 4.7mm | |
| Height | 9.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IRFIZ48G | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.3mm | ||
Standards/Approvals No | ||
Width 4.7mm | ||
Height 9.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRFIZ48G Series Power MOSFET, 60V Drain Source Voltage, 37A Continuous Drain Current - IRFIZ48GPBF
This power MOSFET is a through-hole N-channel enhancement device designed for switching and power-control tasks in industrial and electronic systems. It operates at medium voltage and is suited to applications requiring significant continuous current handling and elevated temperature tolerance while mounted in a TO-220 package.
Features and Benefits:
• 60V maximum drain voltage enables moderate-voltage system use • 37A continuous drain current supports high-current switching • 18mΩ Rds(on) reduces conduction losses for efficient operation • 50W power dissipation allows sustained thermal loading • 110nC typical gate charge at Vgs provides predictable switching behaviour • 175°C maximum operating temperature permits hot-environment deployment
Applications
• Suitable for motor-drive stage in automation systems • Ideal for power supplies and DC-DC converters • Used for relay replacement in industrial control panels • Can be used for battery-management and power-distribution circuits
What gate-voltage limits should I respect during design?
The maximum gate-to-source voltage is 20V, so gate-drive circuitry must not exceed this to prevent device damage.
How does the package affect mounting and cooling options?
The TO-220 through-hole package with three pins allows bolted heatsink attachment and straightforward PCB mounting for enhanced thermal conduction.
What temperature range can the device tolerate in service?
It is rated for operation from -55°C up to 175°C, enabling use in environments with wide thermal excursions.
What switching characteristic influences drive requirements?
The typical gate charge of 110nC at Vgs determines the drive current and driver selection to achieve desired rise/fall times.
How should I account for power losses in thermal design?
Use the 50W power-dissipation rating to size heatsinks and thermal interfaces, calculating expected losses from conduction and switching for steady-state conditions.
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