Vishay IRFIZ48G Type N-Channel Power MOSFET, 37 A, 60 V Enhancement, 3-Pin TO-220 IRFIZ48GPBF
- RS庫存編號:
- 708-4799
- 製造零件編號:
- IRFIZ48GPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD693.00
(不含稅)
TWD727.65
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 160 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD138.60 | TWD693.00 |
| 15 + | TWD135.60 | TWD678.00 |
* 參考價格
- RS庫存編號:
- 708-4799
- 製造零件編號:
- IRFIZ48GPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IRFIZ48G | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.3mm | |
| Height | 9.8mm | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IRFIZ48G | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.3mm | ||
Height 9.8mm | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRFIZ48G Series Power MOSFET, 60V Maximum Drain Source Voltage, 37A Maximum Continuous Drain Current - IRFIZ48GPBF
This power MOSFET is a through-hole N-channel enhancement device designed for power switching and control in electronic systems. It operates across a wide temperature span and is suited to PCB-mounted applications requiring substantial current handling and moderate voltage capability. The component is supplied in a TO-220 package for straightforward thermal interfacing and mounting.
Features and Benefits:
• 60V drain-source rating supports medium-voltage switching applications
• 37A continuous drain current enables high-current control tasks
• 18mΩ Rds(on) minimises conduction losses for efficient power transfer
• 50W power dissipation allows sustained load handling with heat-sinking
• 110nC typical gate charge enables predictable switching performance
• 20V maximum gate-source voltage provides margin for gate-drive circuits
• 37A continuous drain current enables high-current control tasks
• 18mΩ Rds(on) minimises conduction losses for efficient power transfer
• 50W power dissipation allows sustained load handling with heat-sinking
• 110nC typical gate charge enables predictable switching performance
• 20V maximum gate-source voltage provides margin for gate-drive circuits
Applications
• Suitable for motor driver stages in industrial controllers
• Used for DC-DC converters requiring through-hole power devices
• Ideal for power supplies in test and prototyping rigs
• Can be used for high-current load switching on PCBs
• Used with gate drivers for pulse-width-modulated switching
• Used for DC-DC converters requiring through-hole power devices
• Ideal for power supplies in test and prototyping rigs
• Can be used for high-current load switching on PCBs
• Used with gate drivers for pulse-width-modulated switching
What thermal range can it tolerate during operation?
It is specified for operation from -55°C up to 175°C enabling use in demanding temperature environments.
How does the gate charge affect switching design?
The 110nC gate charge determines required gate-drive current and influences switching transition losses and driver selection.
What mounting and assembly considerations are there?
The TO-220 through-hole format permits direct PCB mounting and straightforward attachment of a heatsink to manage the 50W dissipation rating.
Which electrical limit prevents exceeding gate voltage?
The maximum gate-source rating is 20V so gate-drive circuits must remain below this threshold to avoid device stress.
相關連結
- Vishay IRFI Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFIZ24GPBF
- Vishay IRFI Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220