Infineon Single HEXFET 1 Type N-Channel MOSFET, 210 A, 30 V Enhancement, 3-Pin TO-247AC IRFP3703PBF

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RS庫存編號:
913-3840
製造零件編號:
IRFP3703PBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.8W

Transistor Configuration

Single

Maximum Operating Temperature

175°C

Length

15.9mm

Height

20.3mm

Width

5.3 mm

Number of Elements per Chip

1

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF


This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems.

Features & Benefits


• Handles up to 210A continuous drain current

• Low on-resistance of 2.8mΩ minimises power losses

• Optimised for high-speed operations with quick turn-on and turn-off

• Single transistor configuration simplifies circuit design

Applications


• Used in power management systems for efficient switching

• Applied in synchronous rectification to enhance energy conversion

• Integrated in industrial automation equipment for dependable operation

• Utilised in power supplies requiring high efficiency and minimal heat generation

• Suitable for automotive needing durable components

What type of applications is this device best suited for?


This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities.

How does the high continuous drain current affect performance?


The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability.

What are the implications of the low on-resistance?


A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions.

What operating temperature range can this device handle?


It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments.

How does the MOSFET’s configuration improve circuit design?


The single transistor configuration streamlines circuit layouts, reducing the number of required components while ensuring dependable operation in high-speed applications.

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