Wolfspeed Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247 C2M0160120D
- RS庫存編號:
- 904-7348
- 製造零件編號:
- C2M0160120D
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD419.00
(不含稅)
TWD439.95
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 105 件準備從其他地點送貨
- 最終 200 件從 2026年1月08日 起發貨
單位 | 每單位 |
|---|---|
| 1 - 7 | TWD419.00 |
| 8 - 39 | TWD410.00 |
| 40 + | TWD403.00 |
* 參考價格
- RS庫存編號:
- 904-7348
- 製造零件編號:
- C2M0160120D
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 196mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 3.9V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 196mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 3.9V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
相關連結
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 C2M0040120D
- Wolfspeed Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 C3M0032120K