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    SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

    RS庫存編號:
    904-7348
    製造零件編號:
    C2M0160120D
    製造商:
    Wolfspeed
    Wolfspeed

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    271 現貨庫存,可於6工作日發貨。
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    RS庫存編號:
    904-7348
    製造零件編號:
    C2M0160120D
    製造商:
    Wolfspeed
    COO (Country of Origin):
    CN

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    COO (Country of Origin):
    CN

    產品詳細資訊

    Wolfspeed Silicon Carbide Power MOSFETs


    Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.


    • Enhancement-mode N-channel SiC technology
    • High Drain-Source breakdown voltages - up to 1200V
    • Multiple devices are easy to parallel and simple to drive
    • High speed switching with low on-resistance
    • Latch-up resistant operation



    MOSFET Transistors, Wolfspeed


    規格

    屬性
    Channel TypeN
    Maximum Continuous Drain Current19 A
    Maximum Drain Source Voltage1200 V
    Package TypeTO-247
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance196 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2.5V
    Minimum Gate Threshold Voltage2.4V
    Maximum Power Dissipation125 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-5 V, +20 V
    Length16.13mm
    Typical Gate Charge @ Vgs34 nC @ 20 V, 34 nC @ 5 V
    Number of Elements per Chip1
    Transistor MaterialSiC
    Maximum Operating Temperature+150 °C
    Width5.21mm
    Height21.1mm
    Forward Diode Voltage3.3V
    Minimum Operating Temperature-55 °C
    271 現貨庫存,可於6工作日發貨。
    Add to Basket
    單位

    已增加

    單價(不含稅) 個

    TWD514.00

    (不含稅)

    TWD539.70

    (含稅)

    單位Per unit
    1 - 7TWD514.00
    8 - 14TWD501.00
    15 +TWD495.00
    包裝方式: