onsemi PowerTrench Type N-Channel MOSFET, 10 A, 40 V Enhancement, 6-Pin MLP FDMA8051L
- RS庫存編號:
- 864-8170
- 製造零件編號:
- FDMA8051L
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 10 件）*
TWD137.00
(不含稅)
TWD143.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,990 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD13.70 | TWD137.00 |
| 750 - 1490 | TWD13.30 | TWD133.00 |
| 1500 + | TWD13.10 | TWD131.00 |
* 參考價格
- RS庫存編號:
- 864-8170
- 製造零件編號:
- FDMA8051L
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | MLP | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 900mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2 mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type MLP | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 900mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 2 mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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