onsemi PowerTrench Type N-Channel MOSFET, 10 A, 40 V Enhancement, 6-Pin MLP
- RS庫存編號:
- 145-5682
- 製造零件編號:
- FDMA8051L
- 製造商:
- onsemi
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- RS庫存編號:
- 145-5682
- 製造零件編號:
- FDMA8051L
- 製造商:
- onsemi
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | MLP | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2 mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Length | 2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type MLP | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2 mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Length 2mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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