onsemi Single SuperFET II 1 Type N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z
- RS庫存編號:
- 864-4992
- 製造零件編號:
- FCU900N60Z
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 75 件）*
TWD2,032.50
(不含稅)
TWD2,134.50
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 225 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 300 | TWD27.10 | TWD2,032.50 |
| 375 - 675 | TWD26.40 | TWD1,980.00 |
| 750 + | TWD25.70 | TWD1,927.50 |
* 參考價格
- RS庫存編號:
- 864-4992
- 製造零件編號:
- FCU900N60Z
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK (TO-251) | |
| Series | SuperFET II | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5 mm | |
| Length | 6.8mm | |
| Height | 6.3mm | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK (TO-251) | ||
Series SuperFET II | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 2.5 mm | ||
Length 6.8mm | ||
Height 6.3mm | ||
Number of Elements per Chip 1 | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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