onsemi SuperFET II Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 FCPF190N60
- RS庫存編號:
- 864-7913
- 製造零件編號:
- FCPF190N60
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 2 件）*
TWD253.00
(不含稅)
TWD265.64
(含稅)
添加 12 件 件可免費送貨
最後的 RS 庫存
- 加上 4 件從 2026年2月23日 起發貨
- 最終 910 件從 2026年3月02日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD126.50 | TWD253.00 |
| 10 + | TWD125.50 | TWD251.00 |
* 參考價格
- RS庫存編號:
- 864-7913
- 製造零件編號:
- FCPF190N60
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperFET II | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Height | 16.07mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperFET II | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Height 16.07mm | ||
Automotive Standard No | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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