onsemi SuperFET II Type N-Channel MOSFET, 20.6 A, 600 V Enhancement, 3-Pin TO-220 FCP190N60E
- RS庫存編號:
- 772-9102
- 製造零件編號:
- FCP190N60E
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD267.00
(不含稅)
TWD280.36
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,192 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD133.50 | TWD267.00 |
| 14 - 24 | TWD130.00 | TWD260.00 |
| 26 + | TWD128.00 | TWD256.00 |
* 參考價格
- RS庫存編號:
- 772-9102
- 製造零件編號:
- FCP190N60E
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SuperFET II | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30 V ac | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SuperFET II | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30 V ac | ||
Maximum Operating Temperature 150°C | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an Advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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