Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF
- RS庫存編號:
- 827-3896
- 製造零件編號:
- IRF7832TRPBF
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 10 件）*
TWD388.00
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TWD407.40
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,550 件從 2026年8月17日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 990 | TWD38.80 | TWD388.00 |
| 1000 - 1990 | TWD37.70 | TWD377.00 |
| 2000 + | TWD35.20 | TWD352.00 |
* 參考價格
- RS庫存編號:
- 827-3896
- 製造零件編號:
- IRF7832TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 20A Maximum Continuous Drain Current - IRF7832TRPBF
This MOSFET is a surface-mount N-channel enhancement device designed for power switching and control in compact electronic systems. It operates across a wide temperature range suitable for industrial environments and integrates into standard SOIC footprints for PCB assembly, offering a balance of current capability and manageable power dissipation for medium-power designs.
Features and Benefits:
• Very low on-resistance 4.8 mΩ enabling reduced conduction losses
• 20A continuous drain current supporting high-current loads
• 30V drain-source rating for common low-voltage power rails
• 34 nC typical gate charge for faster switching transitions
• 2.5W maximum power dissipation for sustained thermal handling
• ±20V gate-source tolerance allowing flexible drive levels
• 20A continuous drain current supporting high-current loads
• 30V drain-source rating for common low-voltage power rails
• 34 nC typical gate charge for faster switching transitions
• 2.5W maximum power dissipation for sustained thermal handling
• ±20V gate-source tolerance allowing flexible drive levels
Applications
• Suitable for DC-DC converter switching stages
• Ideal for motor driver power switches in compact designs
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution
• Ideal for motor driver power switches in compact designs
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution
What thermal extremes can it withstand in service?
The device is specified to function between -55 °C and 155 °C, enabling use in harsh industrial temperature conditions.
How many pins does the package present for PCB layout?
It comes in an 8-pin SOIC package which aids in standard footprint placement and thermal spreading.
What gate drive considerations arise from its gate charge?
With a typical gate charge of 34 nC, drivers must supply sufficient peak current to achieve the desired switching speed without excessive drive losses.
How does its forward voltage affect series conduction scenarios?
The measured forward voltage of 1V affects the drop across intrinsic diode events and should be considered when designing for reverse recovery or body-diode conduction.
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