Infineon HEXFET Type N-Channel MOSFET, 18 A, 40 V Enhancement, 8-Pin SOIC

RS庫存編號:: 165-5716
製造零件編號:: IRF7842TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 40 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 4000 件）*

TWD80,400.00

(不含稅)

TWD84,400.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月22日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
4000 - 16000	TWD20.10	TWD80,400.00
20000 +	TWD19.10	TWD76,400.00

* 參考價格

RS庫存編號:: 165-5716
製造零件編號:: IRF7842TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	33nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 33nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7842TRPBF

This MOSFET delivers high performance in various electronic applications. With specifications including an 18A continuous drain current and a maximum drain-source voltage of 40V, it enhances power efficiency for electronic devices. Designed for surface mount technology, this device ensures durability and is suitable for professionals in electronics and automation.

Features & Benefits

• Low Rds(on) at 4.5V improves efficiency

• High current handling optimises power delivery

• Minimal gate charge reduces switching losses

• Avalanche rated to enhance reliability

• N-channel configuration supports effective performance in control applications

Applications

• Used in synchronous MOSFET circuits for notebook processor power

• Acts as secondary synchronous rectification in isolated DC-DC converters

• Functions in non-isolated DC-DC converter designs

What is the maximum operating temperature for this device?

It operates efficiently up to +150°C, ensuring reliability in high-temperature environments.

How does this component handle current during operation?

The device supports a continuous drain current of 18A, suitable for various applications.

Can it be used in high-voltage circuits?

Yes, the maximum drain-source voltage is rated at 40V, providing flexibility for high-voltage applications.

What are the thermal resistance characteristics?

The thermal resistance from junction-to-ambient is typically around 50-55°C/W, facilitating effective heat dissipation.

Is this MOSFET compatible with surface mount technology?

Yes, it is available in a SOIC package specifically designed for surface mounting, enhancing ease of integration in circuit designs.