Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1
- RS庫存編號:
- 825-9134
- 製造零件編號:
- BSZ086P03NS3EGATMA1
- 製造商:
- Infineon
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TWD650.00
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- 加上 960 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 1240 | TWD32.50 | TWD650.00 |
| 1260 + | TWD31.60 | TWD632.00 |
* 參考價格
- RS庫存編號:
- 825-9134
- 製造零件編號:
- BSZ086P03NS3EGATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
不適用
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ086P03NS3EGATMA1
This MOSFET is a P‑channel enhancement device designed for high‑current switching in compact surface‑mount assemblies. It operates across a wide temperature range suitable for demanding electronic environments and is built to handle significant drain currents and power dissipation. The package is a low‑profile 8‑pin TSDSON for efficient PCB mounting and thermal performance.
Features and Benefits:
• Low on‑resistance reduces conduction losses during high currents
• 40A continuous drain current supports heavy load switching
• 69W maximum power dissipation enables higher power handling
• 43.2nC typical gate charge balances switching speed and drive effort
• 25V gate tolerance allows robust gate‑drive margins
• 30V drain‑source rating suits moderate voltage system designs
• 40A continuous drain current supports heavy load switching
• 69W maximum power dissipation enables higher power handling
• 43.2nC typical gate charge balances switching speed and drive effort
• 25V gate tolerance allows robust gate‑drive margins
• 30V drain‑source rating suits moderate voltage system designs
Applications
• Suitable for point‑of‑load power conversion modules
• Ideal for synchronous buck converter switches
• Used with battery management circuits in power systems
• Can be used for motor‑driver low‑side/power‑path control
• Appropriate for telecoms and server power rails
• Ideal for synchronous buck converter switches
• Used with battery management circuits in power systems
• Can be used for motor‑driver low‑side/power‑path control
• Appropriate for telecoms and server power rails
What thermal extremes can it withstand during operation?
It is specified to operate from -55°C up to 150°C, accommodating wide ambient and junction variations.
How many pins and which mounting method does it use?
The device uses an 8‑pin footprint and is intended for surface mounting in a TSDSON package.
What electrical characteristic limits conduction losses?
The device’s maximum drain‑source resistance is 13.4mΩ, which governs on‑state voltage drop and efficiency.
What gate‑driving considerations are relevant for switching design?
With a typical gate charge of 43.2nC and a maximum gate‑source rating of 25V, drive circuitry must supply sufficient charge while staying within voltage limits.
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