Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3GATMA1
- RS庫存編號:
- 825-9130
- 製造零件編號:
- BSZ086P03NS3GATMA1
- 製造商:
- Infineon
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TWD638.00
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TWD670.00
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- 從 2027年1月04日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 1240 | TWD31.90 | TWD638.00 |
| 1260 - 2480 | TWD31.00 | TWD620.00 |
| 2500 + | TWD29.00 | TWD580.00 |
* 參考價格
- RS庫存編號:
- 825-9130
- 製造零件編號:
- BSZ086P03NS3GATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43.2nC | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43.2nC | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
不適用
Infineon OptiMOS P Series MOSFET, 30V Drain Source Voltage, 40A Continuous Drain Current - BSZ086P03NS3GATMA1
This MOSFET is a P‑channel enhancement device designed for surface‑mount power switching in industrial temperature environments. It operates across an extended ambient range and is intended for high‑current switching roles where compact, low‑profile packaging is required.
Features and Benefits:
• 30V drain-source rating supports low‑voltage power rails
• 40A continuous drain current enables high‑current switching
• 13.4 mΩ low Rds(on) reduces conduction losses
• 69W maximum power dissipation manages thermal load
• 43.2 nC typical gate charge balances switching speed and drive demand
• 25V maximum gate-source voltage permits robust gate‑drive margins
• 40A continuous drain current enables high‑current switching
• 13.4 mΩ low Rds(on) reduces conduction losses
• 69W maximum power dissipation manages thermal load
• 43.2 nC typical gate charge balances switching speed and drive demand
• 25V maximum gate-source voltage permits robust gate‑drive margins
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for DC motor control and drive stages
• Used for load switching in telecoms and server power systems
• Can be used for battery management and distribution circuits
• Suitable for compact power modules requiring low‑profile components
• Ideal for DC motor control and drive stages
• Used for load switching in telecoms and server power systems
• Can be used for battery management and distribution circuits
• Suitable for compact power modules requiring low‑profile components
What package type should I expect for PCB assembly?
It is supplied in an 8‑pin TSDSON surface‑mount package suitable for automated pick‑and‑place and reflow soldering processes.
How does the device handle wide temperature ranges during operation?
The component is specified to operate from -55°C up to 150°C, allowing use in harsh industrial temperature conditions with appropriate thermal management.
What channel conduction polarity must the gate driver accommodate?
The device is P‑channel, so gate‑drive logic must be arranged for P‑type enhancement operation and appropriate pull‑up/pull‑down signalling.
Are there mounting or profile advantages to consider?
The low‑profile 1.1mm package height supports space‑constrained layouts and enables dense assembly in compact power designs.
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